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De N-Type technologie
Contrary to P-type modules,
the wafer in an N-type module is positively charged on the underside and negatively charged on the upper side. This leads to a lower temperature coefficient and allows for higher yields.
The bottom of the wafer is positively charged and doped with boron, one less electron than silicon.
In contrast, the upper side of the wafer is negatively charged. The wafer is doped with phosphorus and contains one more electron than silicon.
The bottom of the wafer is positively charged and doped with boron, one less electron than silicon.
In contrast, the upper side of the wafer is negatively charged. The wafer is doped with phosphorus and contains one more electron than silicon.
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